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| freescale semiconductor, inc. reserves the right to change the detail specifications, as may be required, to permit improvements in the design of its products. document number: mc33198 rev. 2.0, 11/2006 freescale semiconductor technical data ? freescale semiconductor, in c., 2007. all rights reserved. automotive high-side tmos driver the mc33198 is a high-side tmos driver, dedicated to automotive applications. it is used in conjunction with an external power mosfet for high-side drive applications. t he device can drive and protect a large variety of mosfets. the device has a cmos compatible input control, charge pump to drive the mosfet gate, and fault detection circuitry based on programmable v ds monitoring to detect shorted loads. it also includes a programmable timer function to eliminate undesired switch off due to in rush currents, and a status pin which reports the output status of both on and off mosfet states. the device uses few external components and offers an economical solution to large current high side switches. it also has pwm capability up to 1khz. features ? designed for automotive high side driver application ? works with a wide variety of n-channel power mosfets ? pwm capability ? on board charge pump capable of charging 25nf in less than 1ms with no external components required ? drive inductive load with no ex ternal clamp circuitry required ? cmos logic compatible input control ? tmos over current and short circuit protection ? fault output to report an mosfet overcurrent condition ? output status available when mosfet is on or off ? extended temperature range from -40c to 125c ? protected against automotive transients with few external components ? overvoltage and undervoltage shutdown ? pb-free packaging designated by suffix code ef figure 1. 33198 simplified application diagram high-side tmos driver d suffix ef suffix (pb-free) 98asb42564b 8-pin soicn 33198 ordering information device temperature range (t a ) package mc33198d -40c to 125c 8 soicn mcz33198ef/r2 33198 mcu vbat 5.0v status input gnd timer src gate drn vcc load
analog integrated circuit device data 2 freescale semiconductor 33198 internal block diagram internal block diagram figure 2. 33198 simplified internal block diagram and typical application logic over detect volt under volt detect bias supply charge pump power on vcc 10 a 80 a ref 10 a 100 a + - + - + - drn gate src gnd timer input status vcc 15v vbat power tmos load rsrc rdrn c timer 5v mcu c2 c1 c3 rpu 5 7 6 3 8 1 4 2 analog integrated circuit device data freescale semiconductor 3 33198 pin connections pin connections figure 3. 33198 pin connections table 1. 33198 pin definitions pin number pin name formal name definition 1 src source input to detect mosfet/load status 2 drn drain input to set overvoltage threshold 3 gnd ground ground for the device 4 gate gate output to control the gate of external mosfet 5 vcc vcc power for the device 6 status status output signal for mosfet status 7 input input control input 8 timer timer inrush current detection delay timer input 1 2 3 4 5 6 7 8 input status gnd timer vcc gate drn src analog integrated circuit device data 4 freescale semiconductor 33198 electrical characteristics maximum ratings electrical characteristics maximum ratings table 2. maximum ratings all voltages are with respect to ground unless otherwise no ted. exceeding these ratings may cause a malfunction or permanent damage to the device. ratings symbol value unit electrical ratings power supply voltage v cc - 0,6 to 60 v tmos source voltage v src - 0,6 to 60 v comparator threshold v drn - 0,6 to 60 v gate output voltage v gate - 0,6 to 25 v input voltage v in - 0,6 to 25 v status v st - 0,6 to 10 v esd voltage capability (1) v esd +/-2000 v thermal ratings storage temperature t stg -55 to +150 c operating junction temperature t j -40 to +150 c thermal resistance thermal resistance j/a r j 145 c peak package reflow temperature during reflow (2) , (3) t pprt note 3 c notes 1. esd testing is performed in accordance with the human body model (hbm) (c zap = 100 pf, r zap = 1500 ? ), the machine model (mm) (c zap = 200 pf, r zap = 0 ? ), and the charge device model (cdm), robotic (c zap = 4.0pf). 2. pin soldering temperature limit is for 10 seconds maximum dura tion. not designed for immersion so ldering. exceeding these lim its may cause malfunction or permanent damage to the device. 3. freescale?s package reflow capability m eets pb-free requirements for jedec standard j-std-020c. for peak package reflow temperature and moisture sensitivity levels (msl), go to www.freescale.com, search by part number [e.g. remove pref ixes/suffixes and enter the core id to view all orderable parts . (i.e. mc33xxxd enter 33xxx), and review parametrics. analog integrated circuit device data freescale semiconductor 5 33198 electrical characteristics static electrical characteristics static electrical characteristics table 3. static electric al characteristics characteristics noted under conditions 7.0 v v sup 20 v, - 40 c t a 125 c, gnd = 0 v unless otherwise noted. typical values noted reflect the approximate parameter means at t a = 25 c under nominal conditions unless otherwise noted. characteristic symbol min typ max unit src pin 1 leakage current il src -10 - 10 a drn pin 2 threshold current i thr 54 81 102 a drn leakage, input off, vcc pin open i leak - - 10 a gate pin 4 output on voltage at 1ms (charge pump on) v on vcc + 7.0 vcc+15 v turn off current with no over v ds condition and v out >0.5v with over v ds condition and v out >0.5v i outn i outw 70 5.0 110 10 150 15 a a output off voltage. (charge pump off and vcc pin open) v off 0.0 - 0.9 v gate discharge current. (vcc pin open) i off - 5.0 - a turn on time cl = 25nf ; 7.0v < v cc < 10v ; v out > v cc +7.0 cl = 25nf ; 10v < v cc < 20v ; v out > v cc +10 t on - - - - - 1.0 1.0 ms vcc pin 5 supply voltage range v cc 7.0 - 20 v quiescent supply current ; in = 0v at v cc = 7.0v at v cc = 20v i ccq - - 1.8 2.8 4.0 6.0 ma supply current ; in = 5.0v i cc 1.0 - 35 ma over voltage threshold v ov 22 28 34 v under voltage threshold v ur - 6.0 7.0 v status pin 6 output voltage @ i = 1ma v ol 0.1 0.4 1.5 v input pin 7 input low voltage v il - - 1.5 v input high voltage v ih 3.5 - - v input hysteresis v hys 0.8 - - v input pull down resistor. v in >11v r in 20 36 100 k ? open input voltage v iop - - 1.0 v analog integrated circuit device data 6 freescale semiconductor 33198 electrical characteristics static electrical characteristics timer pin 8 timer current i time 7.0 10 14 a on threshold v hth 5.2 5.5 5.8 v discharge current @ v pin 8 = 5.0v i disch 2.0 5.0 10 ma saturation voltage @ i pin 8 = 1ma v sat - 0.15 0.4 v table 3. static electrical characteristics (continued) characteristics noted under conditions 7.0 v v sup 20 v, - 40 c t a 125 c, gnd = 0 v unless otherwise noted. typical values noted reflect the approximate parameter means at t a = 25 c under nominal conditions unless otherwise noted. characteristic symbol min typ max unit analog integrated circuit device data freescale semiconductor 7 33198 electrical characteristics dynamic electrical characteristics dynamic electrical characteristics timing diagrams figure 4. timing measurements test schematic table 4. dynamic electri cal characteristics characteristics noted under conditions 7.0 v v sup 18 v, - 40 c t a 125 c, gnd = 0 v unless otherwise noted. typical values noted reflect the approximate parameter means at t a = 25 c under nominal conditions unless otherwise noted. parameter vcc = 7.0v vcc = 14v vcc = 21v unit typical rise time (t r ) versus gate external capacitor lo ad and supply voltage (refer to figure 4 ) c = 1.0nf 15 7.0 10 s c = 3.0nf 60 25 40 s c = 10nf 140 80 90 s c = 30nf 730 270 340 s typical fall time (t f ) versus gate external capacitor load and supply voltage (refer to figure 4 ) c = 1.0nf 150 230 280 s c = 3.0nf 430 800 950 s c = 10nf 1200 2300 2750 s c = 30nf 4800 8000 9200 s 10% 90% c 51 4 2 3 8 6 7 vcc input gate src drn vcc status timer gnd 0v 5v input pin 7 gate pin 4 + 15v) t r t f typically (v cc analog integrated circuit device data 8 freescale semiconductor 33198 electrical characteristics timing diagrams figure 5. descript ive waveform diagram 0v < 30v and > 20v vbat 0v 5v 0v vbat + 14v 0v 0v 10v 5,5v 0v 5v under voltage threshold under voltage threshold vcc pin 5 (v) mosfet gate (v) m osfet source (v) fault pin 6 (v) in pin 7 (v) pin 2 voltage 110 a gate discharge current 10 a gate discharge current 10 a discharge tempory normal switch on/off mosfet off overvoltage condition permanent overload undervoltage condition overload load shorted to vbat load voltage (v) timer pin 8 (v) < vbat analog integrated circuit device data freescale semiconductor 9 33198 electrical characteristics electrical performance curves electrical per formance curves figure 6. supply current versus supply voltage. pin 7 = 0v figure 7. supply current versus supply voltage. pin 7 = 5.0v figure 8. time current versus supply voltage figure 9. drain current versus supply voltage figure 10. fault output voltage versus current figure 11. gate voltage versus voltage g 0 3 1 4 2 5 supply current (ma) ta = 125 c ta = -40 c ta = 25 c vcc, supply voltage (v) 510152025 supply current (ma) 0 15 5 20 10 25 5 10 15 20 25 vcc, supply voltage (v) vcc, supply voltage (v) 8 10 9 11 timer current (ua) ta = 125 c ta = 25 c ta = -40 c 51015 20 25 72 76 74 78 vcc, supply voltage (v) drain current (ua) ta = 125 c ta = - 40 c 80 ta = 25 c 510152025 045 3 12 0.5 1 1.5 2 fault output voltage (v) fault output current (ma) ta = 125 c ta = -40 c ta = 25 c vcc, supply voltage (v) vg, gate voltage (v) 125 c -40 c 25 c 51015 20 25 40 35 30 25 15 20 analog integrated circuit device data 10 freescale semiconductor 33198 electrical characteristics electrical performance curves figure 12. gate voltage versus gate output current. t a = 25 c. figure 13. gate voltage versus gate output current. t a = 125 c figure 14. gate voltage versus gate output current. t a = 40 c figure 15. gate voltage versus v cc and r g at t a = 25 c 01234 5 10 15 20 25 30 35 40 gate output current (ma) gate voltage (v) vcc = 7v vcc = 14v vcc = 21v 01234 5 10 15 20 25 30 35 40 gate output current (ma) vcc = 7v gate voltage (v) vcc = 14v vcc = 21v 01234 5 10 15 20 25 30 35 40 gate output current (ma) vcc = 7v vcc = 14v vcc = 21v gate voltage (v) v cc , supply voltage (v) gate voltage(v) 5 7 15 19 35 30 25 15 20 10 5 0 91113 17 21 no r g r g = 68k r g = 39k r g = 15k analog integrated circuit device data freescale semiconductor 11 33198 functional description introduction functional description introduction the mc33198 is a high side tmos driver, dedicated to automotive applications. it is used in conjunction with an external power mosfet for high side drive applications. the device can drive and protect a large variety of mosfets. the device has a cmos compatible input control, charge pump to drive the mosfet gate, and fault detection circuitry based on programmable v ds monitoring to detect shorted loads. it also includes a programmable timer function to eliminate undesired switch off du e to in rush currents, and a status pin which reports the out put status of both on and off mosfet states. the device uses few external components, and offers an economical solution to large current high side switches. it also has pwm capability up to 1khz. power supply the mc33198 can be supplied from the battery line. it is designed with a 60v technology, making it able to sustain up to 60v transient pulses. in the off state, with pin 7 low, the supply current can be up to 5.0ma, and in operation, pin 7 high, the current up to 25ma. the device has an undervoltage detection and shutdown near 7.0v. below this value the mosfet is turned off. there is also a 25v overvoltage detection which swit ches off the output pin 4 to protect both the mosfet and the load when v cc is higher than 25v. charge pump the device incorporates a se lf running charge pump with an internal capacitor and is connected at gate pin 4. to prevent oscillation, a serial re sistor can be added. the charge pump is able to charge a 25nf capacitor in less than 1ms. this allows the mc33198 to have a rapid response time and to drive the external tmos gate very quickly, allowing fast switching on of the load. th e device has an internal 15v zener diode between pin 4 and 1, to clamp the gate-to- source voltage and protect the mosfet gate oxide from destruction. see dynamic electrical characteristics on page 7 for details. band gap and reference currents the mc33198 has an internal band gap reference voltage which generates all the internal thresholds. this band gap is also used to generate internal reference currents necessary for proper operation of the device. these currents are : pin 2 : drain current (typically 80ma). pin 4 : high and low gate discharge currents (typically 100ma and 10ma). pin 8 : timer charge current (10ma typical). all these currents are derived from the same reference voltage and internal resistor. their accuracy and variability is approximately +-25% over the full temperature and voltage range. in addition, a passive pull down current of 5.0ma maintains the gate of the mosfet below 0.9v when the device has no supply, ensuring that the mosfet remains off. this passive pulldown current is operating even if device vcc (pin 5) is not powered up. input circuitry the input pin (pin 7) of the device is cmos compatible and can be directly connected to a microcontroller. the input current is determined by an internal pull down resistor, typically 36kw. a hysteresis of 0.8 v minimum is present at this input. output status the device has a status output (pin 6) which has an open collector structure. this pin is used to report the mosfet overload condition or the load status when the mosfet is off. the device pin 1 (source) is compared to a programmable threshold at pin 2, in both the on and off state of the mosfet. this allows the detection of the mosfet over v ds or over load conditions when the mosfet is on and the load short to vbat monitoring, when the mosfet is in the off state. this status pi n is normally connected to a pull- up resistor and a micro input , and can drive up to 1.0ma. timer the timer pin (pin 8) is used in conjunction with an external capacitor to create a delay between the overload detection and the shutdown of the mosfet. in case of over load, the internal current source pin 8 will charge the capacitor. when the voltage at pin 8 reaches the 5.5v threshold, the internal c3 comparator will be triggered and switch off the output to prot ect the mosfet. the fault and the mosfet turn off condition are latched and are reset by switching the input off and on. the delay between the overload detection and actual mosfet turn off is used to allow a temporary overload which will prevent the system from switching off during possible inrush currents or transients. mosfet protection and output voltage monitoring the mc33198 has the ability to sense the output mosfet source voltage and compare it to a predetermined threshold. this threshold is programmable, using the internal reference current of 80ma and an external resistor connected at pin 2 (drn). the device can monitor the output load voltage, as well as protect the mosfet in case of overload. the overload detection threshold must be adapted to the mosfet itself depending on the load to be driven and the thermal capability of the mosfet . in practice, the maximum acceptable v ds of the mosfet should be determined and based upon the mosfet maximum power dissipation. analog integrated circuit device data 12 freescale semiconductor 33198 functional description introduction in addition, the pin 8 capacitor value should be calculated to allow inrush current. source (pin1) and drain (pin2) functionality these two pins are used to sense the mosfet and load conditions. pin 2 is connected to the internal pull down current source of 80ma and to the c2 comparator. an external resistor connected between pin 2 and vbat creates a voltage drop across this resistor. the voltage drop will be the mosfet maximum acceptable drain to source voltage and the c2 comparator threshold. pin 1 is connected to the mosfet source pin. two different cases should be considered, mosfet on or off : when the mosfet is on and working under normal conditions, the v ds should be less than the voltage developed at pin 2. so, the c2 comparator output is low and the status is high. no current will flow through the pin 8 capacitor. if the mosfet encounters an overload or if the load is shorted to gnd, the voltage at the source will cross the pin 2 voltage and go below this pin 2 voltage, thereby turning on the c2 comparator. the comparat or will pull the status pin 6 low and will enable the charge of the pin 8 capacitor. when the voltage at the capacitor reaches 5.5v, the c3 comparator will switch off the mosfet by disabling the charge pump and the 110ma current source. the mosfet gate will be discharged only by the 10ma current source. the mosfet is latched off and can be turned back on again by switching the input pin 7 to 0 and back to 1. when the mosfet is off, we have the same scheme. under normal conditions, the load should pull the source voltage to gnd, thus c2 compar ator output is high and status pin pulled low. if the load is shorted to vbat for instance, source pin will be higher t han pin 2, the c2 output comparator is low and the st atus pin is high. this is summarized in table 5, status functionality . operation with inductive loads the device can drive the mosfet during inductive loads switching applications. in this case, a 1.0kw resistor should be connected between source of the mosfet and device pin 1. the resistor will limit the current flowing into pin 1 and prevent mc33198 from damage while switching the inductive load off. the gate voltage is internally clamped at - vbe (0.6v typical), and the v ds is limited to v bat + v be + v gson to prevent excessive power dissipation in the mosfet. the load voltage is limited to v be + v gson and allows a reasonable discharge current. switching on the mosfet switching on is ensured by the internal charge pump. the charge pump response time versus the mosfet gate capacitance is shown in table 4, dynamic electrical characteristics . switching off here two cases have to be discussed: the mosfet normally switching off, and the switching off under a fault condition. the normal switching off is done by internal pull down current sources. the value is 110ma and is in fact composed of two current sources in parallel: a 100ma and a 10ma source. the 10ma current is always connected to the gate pin 4 as shown in the internal block diagram on page 2 . the 100ma source can be disabled. this is the case when the mosfet is switched off under fault conditions. the device will disable the 100ma current source and the mosfet gate will be discharged only by a 10ma current. the time required to switch off the mosfet will be much longer in this case, and will result in a lower overvoltage at the mosfet, especially when the device drives high inductive loads. off state operation without vcc connection when pin 7 is in the low state, the mosfet is off. if v bat is present, the gate voltage is discharged by the 110ma current source. in the case of a v bat disconnection, a self sustaining 5.0ma pull down current source is incorporated in the device, to ensure that th e mosfet gate capacitor is discharged and tied below 0.9v. in case of a vcc disconnection, input pin 7 has no effect on the gate voltage, which is maintained below 0.9v. in this case, the status pin is high. low leakage current at pin 2 (10ma max) allows the operation with the mosfet and mc33198 pin 2 permanently connected to the battery. v cc and other functions can be switched off from the main battery line. see figure 18 . pwm operation since the mc33198 charge pump can deliver a high current, the mosfet gate can be charged fast enough to allow for pwm operations. the maximum pwm frequency is dependent on the mosfet itself and mainly its gate to the source capacitor value. depending on the pwm frequency, table 5. status functionality input pin 7 condition load source voltage c2 output comp status pin 6 timer pin 8 low normal analog integrated circuit device data 14 freescale semiconductor 33198 functional description introduction pin 2, which is normally connected to a resistor, can sustain a reverse battery operat ion, providing that the drn resistor is higher than 3.3k. a 1k resistor at pin 1 is also necessary to limit the reverse current flowing through the mosfet body diode. figure 19. 33198 gnd disconnection circuitry operation when module gnd is disconnected, and if the vbat connection is still present, pin 3 of the mc33198 goes to about 2/3 of v bat , if additional circuitry is not inserted. with r1/q1, the gate/source voltage of the mosfet is shorted as soon as pin 3 voltage rises above gnd level. see figure 19, 33198 gnd disconnection circuitry c 7 6 vbat 4 r1 5 1 3 8 mc33198 5v q1 vbat r1 = 3,3k q1 = 2n2222 in additional circuitry turn-on in case of module to present mosfet gnd disconnection device drive circuitry and interface module gnd load analog integrated circuit device data freescale semiconductor 15 33198 packaging package dimensions packaging package dimensions for the most current package revision, visit www.freescale.com and perform a keyword search using the ?98a? listed below. d suffix ef suffix (pb-free) 8-pin plastic package 98asb42564b issue u analog integrated circuit device data 16 freescale semiconductor 33198 revision history revision history revision date description of changes 2.0 11 /2006 ? converted to freescale format. ? implemented revision history page. ? removed comparison of the 33198 to the 33091 ? added part number mcz33198ef (pb-free) to ordering information on page 1 ? added peak package reflow temperature during reflow (2) , (3) on page 4 mc33198 rev. 2.0 11/2006 information in this document is provided solely to enable system and software implementers to use freescale semiconduc tor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability ar ising out of the application or use of any product or circuit, and specifically discl aims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data s heets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale se miconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the fa ilure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemni fy and hold freescale semiconductor and its officers, employees, subsidiaries, affili ates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale? and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc., 2007. all rights reserved. rohs-compliant and/or pb-free versions of freescale products have the functionality and electrical characteristics of thei r non-rohs-compliant and/or non-pb-free counterparts. for further information, see http://www.freescale.com or contact your freescale sales representative. for information on freescale?s environmental products program, go to http:// www.freescale.com/epp . how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 +1-800-521-6274 or +1-480-768-2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1-8-1, shimo-meguro, meguro-ku, tokyo 153-0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1-800-441-2447 or 303-675-2140 fax: 303-675-2150 ldcforfreescalesemiconductor@hibbertgroup.com |
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